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Радиационные эффекты в интегральных микросхемах

311753

Татевос Мамиконович Агаханян

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The fundamentals of the theory of interaction of ionizing radiation with electronic materials are presented. Models of the behavior of IC elements in fields of ionizing radiation are presented. The features of secondary ionizing effects are considered - radiation “Latching”, radiation-induced secondary breakdown, etc.; influence of residual and transient ionization effects on the characteristics of typical elements of digital and analog ICs. Radiation effects in digital and analog general-purpose ICs are analyzed and the radiation behavior of LSIs is considered, including analysis of microdosimetric effects and functional effects.


For scientists and specialists involved in the development of radio-electronic equipment in the field of nuclear instrumentation, space technology and communications.

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ISBN 5-283-02963-8
Publisher Энергоатомиздат
Publication date 1989
Number of Pages 252
Bookbinding Hardcover

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